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Method for Improving the Thermal Characteristics of Semconductor Memory Cells Cross-reference to Related Applications
| Content Provider | Semantic Scholar |
|---|---|
| Author | Oe, T. IrSt Ele Ctr O. |
| Copyright Year | 2017 |
| Abstract | Correspondence Address: 0 0 DICKE, BILLIG & CZAJA, P.L.L.C. A non-volatile, resistively Switching memory cell is dis FIFTH STREET TOWERS closed. In one embodiment, the memory cell has a first 100 SOUTH FIFTH STREET, SUITE 2250 electrode, a second electrode and a solid electrolyte, which MINNEAPOLIS, MN 55402 (US) is arranged such that it makes contact between the elec trodes, and is composed of an amorphous or partially (21) Appl. No.: 11/261,212 amorphous, non-oxidic matrix and a metal which is distrib uted in the amorphous or partially amorphous, non-oxidic (22) Filed: Oct. 28, 2005 matrix and whose cations migrate to the cathode in the amorphous or partially amorphous, non-oxidic matrix under (30) Foreign Application Priority Data the influence of an electrical voltage, wherein the solid electrolyte contains one or more further metallic materials Oct. 29, 2004 (DE).......................... 1 |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/a5/bb/76/9b399f3a303693/US20060109708A1.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
