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Method of Producing Semconductor Element and Nonvolatle Semconductor Memory Produced by This Method Cross Reference to Related Applications
| Content Provider | Semantic Scholar |
|---|---|
| Copyright Year | 2017 |
| Abstract | (51) Int. Cl. HOIL 2/336 (2006.01) (52) U.S. Cl. .............................................................. 438/297 (57) ABSTRACT In a first embodiment, Tetraethyl Orthosilicate Si(OC2H5)4 is used at the process temperature of 650° C.-5°C. as film forming material, to decrease crystal defects occurring dur ing deposition. In a second embodiment, annealing is carried out in sparse oxygen gas atmosphere after deposition, to mend crystal defects that occurred during deposition. In a third embodiment, initial temperature of the CVD device is kept at about 400°C., whereby the start of natural oxidation of the deposition Surface is prevented and production cir cumstances of the semiconductor element is not deterio rated. Then, the CVD device is heated up to CVD tempera ture of about 750° C. or about 650° C., to deposit oxide. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/af/e9/58/39c88bd4812bd5/US20070004155A1.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
