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Efficient base driver circuit for silicon carbide bipolar junction transistors
| Content Provider | Semantic Scholar |
|---|---|
| Author | McNeill, Neville Stark, Bernard H. Finney, Stephen J. Holliday, Derrick Dymond, Harry C. P. |
| Copyright Year | 2018 |
| Abstract | The silicon carbide bipolar junction transistor needs large transient currents supplied into and out of its base terminal for rapid switching. To realise this, it is normally desirable to have a base driver circuit supply rail at a high voltage. However, the device also needs a steady base current to hold it in the on-state. Supplying this current from a high-voltage source is inefficient. A circuit is presented that applies high transient base-emitter voltages, but with low driver circuit power consumption. |
| Starting Page | 1450 |
| Ending Page | 1452 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1049/el.2018.7057 |
| Alternate Webpage(s) | https://research-information.bris.ac.uk/files/187081765/Full_text_PDF_final_published_version_.pdf |
| Alternate Webpage(s) | https://digital-library.theiet.org/docserver/fulltext/el/54/25/EL.2018.7057.pdf?accname=guest&checksum=9BF2094F2FE8D068F1ADFE30783A3C15&expires=1563127223&id=id |
| Alternate Webpage(s) | https://research-information.bristol.ac.uk/files/187081765/Full_text_PDF_final_published_version_.pdf |
| Alternate Webpage(s) | https://pure.strath.ac.uk/ws/portalfiles/portal/84015563/McNeill_etal_IET_EL_2018_Efficient_base_driver_circuit_for_silicon_carbide_bipolar_junction_transistors.pdf |
| Alternate Webpage(s) | https://doi.org/10.1049/el.2018.7057 |
| Volume Number | 54 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
