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Raman analysis of epitaxial graphene grown on 4 H SiC ( 0001 ) substrate under low pressure condition ∗
| Content Provider | Semantic Scholar |
|---|---|
| Author | Dang-Chao, Wang Tian-Min, Lei |
| Copyright Year | 2011 |
| Abstract | In this paper, we report a feasible route of growing epitaxial graphene on 4H–SiC (0001) substrate in a low pressure of 4 mbar (1 bar=105 Pa) with an argon flux of 2 standard liters per minute at 1200, 1300, 1400, and 1500 ◦C in a commercial chemical vapour deposition SiC reactor. Using Raman spectroscopy and scanning electron microscopy, we confirm that epitaxial graphene evidently forms on SiC surface above 1300 ◦C with a size of several microns. By fitting the 2D band of Raman data with two-Lorentzian function, and comparing with the published reports, we conclude that epitaxial graphene grown at 1300 ◦C is four-layer graphene. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://www.xidian.edu.cn/hyjsktz//docs/20120106144934468159.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
