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Micro-Raman analysis of the influence of hydrogen intercalation on the epitaxial graphene grown on 4 H-SiC ( 0001 ) substrate
| Content Provider | Semantic Scholar |
|---|---|
| Author | Strupinski, Wlodzimierz Wysmołek, A. Stȩpniewski, Roman Baranowski, Jacek M. |
| Copyright Year | 2013 |
| Abstract | It is commonly accepted that properties of epitaxial graphene (EG) grown on SiC are determined by interaction with substrate. It was found, that hydrogen intercalation of EG grown on SiC(0001) substrates by sublimation is a promising method to increase the mobility of carriers [1]. As verified by Raman spectroscopy [2] sublimation grown samples show much stronger interaction with the SiC substrate than epitaxial graphene grown using Chemical Vapor Deposition (CVD) method [3]. In order to achieve better understanding of the effects induced by hydrogenation strain analysis for graphene grown by Si sublimation and CVD technique was performed. In this study random fluctuations of the G and the 2D peaks were used to analyze strain nature in epitaxial graphene grown on terraces of the SiC(0001) substrate. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.phantomsnet.net/imaginenano/Abstracts2013/Graphene2013_Grodecki_Kacper_kacper.grodecki@itme.edu.pl_Micro-Raman%20analysis%20of%20the%20influence%20of%20hydrogen%20intercalation%20on%20the%20epitaxial%20graphene%20grown%20on%204H-SiC(0001)%20substrate.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
