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Hysteresis-free pentacene field-effect transistors and inverters containing poly(4-vinyl phenol-co-methyl methacrylate) gate dielectrics
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kim, Se Hyun Jang, Jaeyoung Jeon, Hayoung Nam, Sooji Park, Chan Eon |
| Copyright Year | 2008 |
| Abstract | The influence of hydroxyl groups on the hysteresis of pentacene field-effect transistors (FETs) and metal-insulator-semiconductor diodes containing poly(4-vinyl phenol) and poly(4-vinyl phenol-co-methyl methacrylate) (PVP-PMMA) gate dielectrics was investigated. The electrical characteristics and Fourier transform infrared spectroscopy measurements show that hysteresis is intimately related to the presence of free OH groups in the polymer gate dielectrics. The methyl methacryl moieties in PVP-PMMA minimize residual water in the polymer and form hydrogen bonds with the hydroxyl groups, thus reducing the number of free OH species. Therefore, pentacene FETs and inverters using PVP-PMMA gate dielectrics exhibit high, hysteresis-free performances. |
| Starting Page | 183306 |
| Ending Page | 183306 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.2924772 |
| Volume Number | 92 |
| Alternate Webpage(s) | https://core.ac.uk/download/pdf/51353323.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.2924772 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |