NDLI: Poly(4-vinylphenol-co-methyl methacrylate)/titanium dioxide nanocomposite gate insulators for 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistors

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Poly(4-vinylphenol-co-methyl methacrylate)/titanium dioxide nanocomposite gate insulators for 6,13-bis(triisopropylsilylethynyl)-pentacene thin-film transistors

Content Provider	Semantic Scholar
Author	Zhang, Xue Park, Ji-Ho Baang, S. Park, Jaehoon Piao, Shang Hao Choi, Hyoung Jin
Copyright Year	2014
Abstract	Poly(4-vinylphenol-co-methyl methacrylate)/titanium dioxide (TiO2) nanocomposite insulators were fabricated for application in 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pn) thin-film transistors (TFTs). The capacitance of the fabricated capacitors with this nanocomposite insulator increased with increasing content of the high-dielectric-constant TiO2 nanoparticles. Nonetheless, particle aggregates, which were invariably produced in the insulator at higher TiO2 contents, augmented gate-leakage currents during device operation while the rough surface of the insulator obstructed charge transport in the conducting channel of the TIPS-Pn TFTs. These results suggest a significant effect of the morphological characteristics of nanocomposite insulators on TFT performance, as well as on their dielectric properties. Herein, the optimal particle composition was determined to be approximately 1.5 wt%, which contributed to characteristic improvements in the drain current, field-effect mobility, and threshold voltage of TIPS-Pn TFTs.
Starting Page	1956
Ending Page	1960
Page Count	5
File Format	PDF HTM / HTML
DOI	10.3938/jkps.65.1956
Volume Number	65
Alternate Webpage(s)	https://page-one.springer.com/pdf/preview/10.3938/jkps.65.1956
Alternate Webpage(s)	https://doi.org/10.3938/jkps.65.1956
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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