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De-excitation mechanisms of Er3+ in Er-doped hydrogenated amorphous silicon prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kim, Mun-Jun Mebratu, G. K. Shin, Jung Hwan |
| Copyright Year | 2003 |
| Abstract | Abstract The de-excitation mechanisms of Er 3+ in Er-doped hydrogenated amorphous silicon prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition of SiH 4 and concurrent sputtering of Er is investigated. As the temperature is raised from 25 to 288 K, the Er 3+ luminescence intensity decreases by a factor of 3 as does its decay time, indicating that activation of non-radiative decay paths for excited Er 3+ ions dominates the thermal quenching of Er 3+ luminescence. Based on the analysis of the temperature dependence of the Er 3+ luminescence decay time, we identify interaction with the defect state near the midgap as the possible back-transfer channel. |
| Starting Page | 53 |
| Ending Page | 59 |
| Page Count | 7 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.jnoncrysol.2003.09.010 |
| Volume Number | 332 |
| Alternate Webpage(s) | http://spl.kaist.ac.kr/file/Published%20Papers/(28)JNCS-KMJ2.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.jnoncrysol.2003.09.010 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
