NDLI: Photoluminescence properties of size-controlled silicon nanocrystals at low temperatures

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Photoluminescence properties of size-controlled silicon nanocrystals at low temperatures

Content Provider	Semantic Scholar
Author	Rinnert, Hervé Jambois, Olivier Vergnat, Michel
Copyright Year	2009
Abstract	This study attempts to clarify the origin of the temperature dependence of the photoluminescence (PL) spectra of silicon nanocrystals (Si-ncs) embedded in SiO2 from 5 to 300 K. For this purpose, size-controlled Si-ncs with a narrow size distribution were fabricated, using the SiO/SiO2 multilayer structure. The PL intensity is strongly temperature dependent and presents a maximum at around 70 K, depending on the Si-nc size and on the excitation power. The origin of this maximum is first discussed thanks to PL dynamics study and power dependence study. The evolution of the PL energy with temperature is also discussed. In bulk semiconductors the temperature dependence of the gap is generally well represented by Varshni's law. Taking into account the quantum confinement energy, the PL energy of Si-ncs follows very well this law in the range 50–300 K. Below 50 K, a strong discrepancy to this law is observed characterized by a strong increase in the PL energy at low temperature, which is dependent on the Si-nc .
Starting Page	023501
Ending Page	023501
Page Count	1
File Format	PDF HTM / HTML
DOI	10.1063/1.3169513
Volume Number	106
Alternate Webpage(s)	https://hal.archives-ouvertes.fr/hal-02164248/file/2009%20Jambois%20JAP.pdf
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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