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A super beta bipolar transistor using SiGe-base surface accumulation layer transistor(SALTran) concept: a simulation study
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kumar, M. J. Singh, Pardeep |
| Copyright Year | 2006 |
| Abstract | Current gain is an important design parameter of bipolar transistors. While a SiGe base is commonly used to increase the current gain, the recently reported surface accumulation layer transistor (SALTran) concept has been shown to give a similar current gain enhancement. Using two-dimensional numerical simulation studies, we show for the first time that a combination of the SiGe base and the SALTran concept can be used to realize super beta bipolar transistors with peak current gains more than 12000. |
| Starting Page | 577 |
| Ending Page | 579 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/TED.2005.863538 |
| Volume Number | 53 |
| Alternate Webpage(s) | http://web.iitd.ac.in/~mamidala/HTMLobj-448/TED_03_superbeta.pdf |
| Journal | IEEE Transactions on Electron Devices |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |