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Solid phase epitaxy for low pressure chemical vapor deposition Si ® lms induced by ion implantation
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chen, Peng-Shiu Hsieh, Tsia-Ying Chu, C. |
| Copyright Year | 1999 |
| Abstract | This work investigated the ion implantation induced solid phase epitaxy (SPE) of Si thin ®lms prepared by low pressure chemical vapor deposition (LPCVD). Previous studies indicate that the residual layer at the interface between the Si thin ®lm and single crystalline substrate is the major obstacle to the SPE process of Si ®lm. In this work, Ge and Si ion were implanted to completely amorphize the Si ®lm prepared by LPCVD. Ion implantation also mixed the interfacial oxide layer and its effects on subsequent epitaxial growth of Si ®lm subjected to various annealing conditions were discussed as well. In addition, the specimen surface was modi®ed by inductive couple plasma (ICP) process. The ICP modi®cation using nitrogen gas could form a vacancy source on the sample surface to enhance the atomic diffusion rate and change the stress state in the vicinity of surface, thereby accelerating the SPE process. q 1999 Elsevier Science S.A. All rights reserved. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/31081/1/000083003400046.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Behavior Biological specimen CDISC SEND Biospecimens Terminology Cations Chemical vapor deposition Diffusion barrier Epitaxy Gases Implants Interface Device Component International System of Units Ion implantation Ions MALL protein, human Maturity onset diabetes mellitus in young Neural Tube Defects Oxygen Plasma Active Silicon Simulated annealing Solid-Phase Synthesis Techniques Tension Vacuum deposition anatomical layer |
| Content Type | Text |
| Resource Type | Article |
