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Annealing kinetics of ˆ 311 ‰ defects and dislocation loops in the end-of-range damage region of ion implanted silicon
| Content Provider | Semantic Scholar |
|---|---|
| Author | Robertsona, L. S. Jones, K. S. Jackson, Joseph M. |
| Copyright Year | 2000 |
| Abstract | The evolution of both$311% defects and dislocation loops in the end-of-range ~EOR! damage region in silicon amorphized by ion implantation was studied by ex situtransmission electron microscopy ~TEM!. The amorphization of a~100! n-type Czochralski wafer was achieved with a 20 keV 1310/cm Si ion implantation. The post-implantation anneals were performed in a furnace at 750 °C for times ranging from 10 to 370 min. After annealing the specimen for 10 min, the microstructure showed a collection of both $311% defects and small dislocation loops. The evolution of a specific group of defects was studied by repeated imaging of the same region after additional annealing. Quantitative TEM showed that $311% defects followed one of two possible evolutionary pathways as annealing times progressed; unfaulting to form dislocation loops or dissolving and releasing interstitials. Results indicate that in this temperature regime, $311% defects are the preferential site for dislocation loop nucleation. © 2000 American Institute of Physics. @S0003-6951 ~00!00807-X# |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://swamp.mse.ufl.edu/articles/2000/Robertson_2000_JApplPhys_87_2910.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Biological specimen CDISC SEND Biospecimens Terminology Dislocations Electron Furnace Device Component Implants International System of Units Ion implantation Ions Kiloelectronvolt Kinetics Internet Protocol Maxima and minima Silicon Simulated annealing |
| Content Type | Text |
| Resource Type | Article |
