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Photoluminescence characterization of Al/Al2O3/InP MIS structures passivated by anodic oxidation
| Content Provider | Semantic Scholar |
|---|---|
| Author | Mahdjoub, Abdelhakim Bourdoucen, Hadj Djelloul, Abdelkader |
| Copyright Year | 2005 |
| Abstract | Metal-insulator-semiconductor (MIS) structures were produced by electron beam heating evaporation of Al2O3 on InP. Polyphosphate thin films with the thickness of 100 to 150 A were used to passivate the interface InP/Insulator. Photoluminescence spectra were obtained at low temperatures at the various stages of MIS-InP structure formation. At ambient temperature, photoluminescence topography made it possible to characterize the surface state after each technological stage. The interface degradation under the effect of repeated annealing is insignificant up to the temperatures close to 350 °C. Major radiative defects detected using photoluminescence spectrum with energies ranged from 0.95 to 1.15 eV were attributed to the impurity complexes of phosphorus vacancies, concentration of which is substantially reduced in the presence of anodic oxide. |
| Starting Page | 341 |
| Ending Page | 348 |
| Page Count | 8 |
| File Format | PDF HTM / HTML |
| DOI | 10.15407/spqeo7.04.436 |
| Volume Number | 29 |
| Alternate Webpage(s) | http://journals.tubitak.gov.tr/physics/issues/fiz-05-29-6/fiz-29-6-2-0410-4.pdf |
| Alternate Webpage(s) | http://journal-spqeo.org.ua/users/pdf/n4_2004/v7n4-436-440.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
