Loading...
Please wait, while we are loading the content...
Similar Documents
Inductively Coupled Plasma Etching of Ta , Co , Fe , NiFe , NiFeCo , and MnNi with Cl 2 / Ar Discharges
| Content Provider | Semantic Scholar |
|---|---|
| Author | Park, Hyung Jo Ra, Hyun-Wook Song, Kwang Sup Hahn, Yoon-Bong |
| Copyright Year | 2004 |
| Abstract | −Dry etching of the magnetic thin films such as Ta, Fe, Co, NiFe, NiFeCo, and MnNi was carried out in inductively coupled plasmas of Cl2/Ar mixture. All the magnetic materials went through a maximum etch rate at 25% Cl2. The effects of the ICP source power and the rf chuck power on the etch rate and the surface roughness were quite dependent of the materials. An ion-enhanced chemical etch mechanism was important for the magnetic films. The surface roughness of the etched samples was relatively constant of the rf chuck power up to 200 W, but a rougher surface at a higher rf power was obtained. Post-etch cleaning of the etched samples in de-ionized water reduced the chlorine residues substantially. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://www.cheric.org/PDF/KJChE/KC21/KC21-6-1235.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
