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Enhancement of Thermoelectric Properties via Radial Dopant Inhomogeneity in B-doped Si Nanowires
| Content Provider | Semantic Scholar |
|---|---|
| Author | Yanagida, Takeshi Zhuge, Fuwei Nagashima, Kazuki Fukata, Naoki Uchida, Ken |
| Copyright Year | 2014 |
| Abstract | We demonstrate an enhancement of thermoelectric properties via a radial dopant inhomogeneity in B-doped Si nanowires. These nanowires were naturally composed of a heavily doped outer shell layer and a lightly doped inner core due to the occurrence of vapor-solid growth on the nanowire surface during vapor-liquid-solid (VLS) method. The thermopower measurements for a single nanowire demonstrated that the Seebeck coefficient value increased up to 1.8 times compared with homogeneously B-doped Si when the apparent nanowire resistivity was above 10 -2 Ωcm. The field effect measurements clarified that in such resistivity range the apparent hole mobility values of these nanowires were higher than those of homogeneously B-doped Si. This mobility enhancement lowers overall electrical resistivity of nanowires while without decreasing Seebeck coefficient value, resulting in the enhancement of thermoelectric power factor. In addition, we found that tailoring the surface dopant distribution by introducing surface δ-doping can further increase the Seebeck coefficient value up to 2.2 times compared with homogeneous doped system. |
| File Format | PDF HTM / HTML |
| DOI | 10.7567/SSDM.2014.PS-13-13 |
| Alternate Webpage(s) | https://confit.atlas.jp/guide/event-img/ssdm2014/PS-13-13/public/pdf_archive?type=in |
| Alternate Webpage(s) | https://doi.org/10.7567/SSDM.2014.PS-13-13 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
