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Investigations of Dopant Clustering in Si via Radial Distribution Function
| Content Provider | Semantic Scholar |
|---|---|
| Author | Thompson, Keith Brian, G. Gerstl, S. S. A. Sebastian, Jason |
| Copyright Year | 2006 |
| Abstract | During the formation of Si nano-devices, group III and V dopant atoms – Sb, B, P, As – are introduced into the Si wafer in order to control both the electrical resistivity and the polarity of discrete regions. For dopant atoms to have the intended affect they must become electrically active, implying that the atom occupies a substitutional site and contributes/removes a free electron from the conduction band. At low concentrations, < 0.01%, nearly 100% of the dopants are electrically active. As ultra-high concentrations are approached, 0.1. – 1%, the electrical activation process becomes less efficient; for every additional dopant atom only a fraction becomes electrically active. |
| Starting Page | 1734 |
| Ending Page | 1735 |
| Page Count | 2 |
| File Format | PDF HTM / HTML |
| DOI | 10.1017/S1431927606065391 |
| Volume Number | 12 |
| Alternate Webpage(s) | https://www.cambridge.org/core/services/aop-cambridge-core/content/view/CBDCD364FA53F35056BC5CE641EA34EE/S1431927606065391a.pdf/investigations_of_dopant_clustering_in_si_via_radial_distribution_function.pdf |
| Alternate Webpage(s) | https://doi.org/10.1017/S1431927606065391 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
