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Rapid Thermal Annealing Eect on Charge Storage Characteristics in MOS Capacitor with Ge Nanocrystals
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kim, Jae Kwon Cheong, Hea Jeong Park, Kyung Hwa Kim, Youngeon Yi, Jae-Yel Bark, Jun Bang, Sung Hoon Cho, Jinhyung |
| Copyright Year | 2003 |
| Abstract | The rapid thermal annealing effect on charge storage characteristics in metal-oxide-semiconductor (MOS) capacitors with Ge nanocrystals is invesigated by means of capacitance-voltage (C-V) and capacitance decay measurements. The C-V curves show the hysteresis indicating the charge storage effect in Ge nanocrystals. The hysteresis width shows strong annealing temperature dependence and shows the maximum at 700 ◦C annealing temperature meaning the optimum annealing condition. From capacitance decay experiment at flat band voltage, we observe initially fast and very slow discharging behaviors. The fast discharge is more significant for samples annealed at lower temperatures. Therefore, the fast discharging is attributed to lateral charge loss of insufficiently localized nanocrystals. The slow discharge is attributed to the stored charges in completely localized Ge nanocrystals. |
| File Format | PDF HTM / HTML |
| Volume Number | 42 |
| Alternate Webpage(s) | http://nsl.donga.ac.kr/Pub/jaekwon_jkps_2003.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
