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P-type transparent conducting Li-doped ZnO thin films prepared by ultrasonic spray pyrolysis method
| Content Provider | Semantic Scholar |
|---|---|
| Author | Bousmaha, Mohamed Bezzerrouk, Mohamed Amine Baghdad, Rachid Kharoubi, B. Chebbah, K. Zellama, K. Zergoug, Mourad |
| Copyright Year | 2013 |
| Abstract | Li-doped p-type ZnO (ZnO :Li) thin films have been prepared under atmospheric pressure by ultrasonic spray pyrolysis method (USP) at optimized substrate temperature of 350 °C. 0.3 M solution of zinc acetate in a mixture of Methanol was employed. Dopant source was lithium chloride (LiCl4) and the molar ratio of Li/Zn is 1%. The results show that Li-doped ZnO thin films were transparent, uniform and strongly adherent to the substrates. The optical transmittance was about 85% in a visible range. The optical band gaps of the films were calculated from Tauc plot. The Raman spectrum shows dominant peaks around 437cm , corresponding to the E2(high) mode of the Raman active mode, a characteristic peak for the wurtzite hexagonal phase of ZnO. No secondary phases were observed for the simple synthesis process adapted in the present work for the Li-doped ZnO films. The p–n heterojunction were prepared by depositing the Li-Doped ZnO film on the n-type silicon substrate. The current–voltage characteristics exhibited the rectifying behavior of a typical p– n junction. Such hetero-structures are promising to find potential applications in electronic and spintronic devices. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://edlib.net/2013/icncre/paper015.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
