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Thermoelectric properties of nanostructured bismuth-telluride thin films grown using pulsed laser deposition
| Content Provider | Semantic Scholar |
|---|---|
| Author | Le, Phuoc Huu Liao, Chien-Neng Luo, Chih-Wei Leu, Jihperng |
| Copyright Year | 2014 |
| Abstract | Nanostructured n-type bismuth telluride (Bi2Te3) thin films were grown on SiO2/Si (1 0 0) substrates at argon ambient pressure (PAr) of 80 Pa by pulsed laser deposition (PLD). The effects of film morphologies, structures, and compositions on the thermoelectric properties were investigated. At a substrate temperature (Ts) of 220–340 C, stoichiometric films with highly (0 0 l)-oriented and layered structures showed the best properties, with a carrier mobility l of 83.9–122.3 cm 2 /Vs, an absolute Seebeck coefficient |a |o f 172.8–189.7 lV/K, and a remarkably high power factor (PF) of 18.2–24.3 l Wc m � 1 |
| Starting Page | 546 |
| Ending Page | 552 |
| Page Count | 7 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.jallcom.2014.07.018 |
| Volume Number | 615 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/25145/1/000342245700085.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.jallcom.2014.07.018 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
