NDLI: Wide band gap silicon carbon nitride ® lms deposited by electron cyclotron resonance plasma chemical vapor deposition

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Wide band gap silicon carbon nitride ® lms deposited by electron cyclotron resonance plasma chemical vapor deposition

Content Provider	Semantic Scholar
Author	Chena, K. H. Wenb, C. Y. Chenb, L. C. Fanc, C. W. Kuoc, P. F. Chenc, Y. F. Huangd, Y. S.
Copyright Year	1999
Abstract	We report on the growth of continuous polycrystalline silicon carbon nitride (SiCN) ®lms using electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR CVD). High nucleation density up to 10 cm was demonstrated, which is much higher than other CVD methods. The resultant SiCN ®lms were thus much smoother and continuous, allowing measurement of various properties of the ®lm. RBS studies show that Si, C, and N are present in the ®lm and that the nitrogen content in the ®lm could reach as high as 57%. The average grain size estimated from HRTEM images was about 20 nm. For the SiCN ®lm with 4.8 at.% carbon content, all d-spacings of the ®lm observed from TED pattern were similar to those of a -Si3N4. High resolution XPS scans showed that the presence of Si±C bonds within the ®lm was negligible. From the RBS, XPS and the TEM results, we suggest the silicon carbon nitride ®lm possessed the same structure as a -Si3N4 with around 4.8 at.% C substituting for Si. It is also demonstrated that this new compound has a direct band gap of about 4.4 eV and an impurity band gap at around 3.0 eV. Thus the ternary SiCN compound reported here constitutes an important addition to the wide band gap material with gap energies within the blue spectral region. Furthermore, the nanocrystalline SiCN ®lms deposited by the ECR CVD process were excellent for buffer layers of SiCN ®lm growth. This provides the possibility of growing continuous and even textured SiCN ®lms at a reasonable growth rate, which enables various studies of the ®lms. q 1999 Elsevier Science S.A. All rights reserved.
File Format	PDF HTM / HTML
Alternate Webpage(s)	http://ntur.lib.ntu.edu.tw//bitstream/246246/163638/1/45.pdf
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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