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Surface passivation attained by silicon dioxide grown at low temperature in nitric acid
| Content Provider | Semantic Scholar |
|---|---|
| Author | Grant, Nicholas E. McIntosh, Keith R. |
| Copyright Year | 2009 |
| Abstract | This work investigates silicon dioxide (SiO2) layers grown at low temperature in concentrated nitric acid (HNO3) solutions. This procedure has the potential to be significantly less expensive than the thermal oxides used in high-efficient solar cells and test structures, but it must also provide good surface passivation. The SiO2 layers are formed by two methods. The first method involves growing a thin (5 nm) SiO2 layer by a two-step nitric acid oxidation process developed by Imai et al. for thin film transistors. The second being a direct current anodization (DCA) process using a 5 wt% HNO3 solution, which results in an SiO2 thickness of 40 nm. Prior to an anneal, both oxidation processes do not passivate the silicon surface, however after an 1100 °C N2 anneal for 30 mins, SRV of 107 cm/s and 70 cm/s can be achieved respectively. The SRV can be further decreased to 40 cm/s after a 30 min forming gas anneal (FGA) at 400 °C. However, the DCA oxides only require a 900 °C N2 anneal for 30 mins to achieve an SRV of 80 cm/s. Thus, while both processes provide high quality SiO2 after a high temperature anneal, the DCA process shows more potential due to the ability to grow thicker SiO2 layers with more control, which passivate at lower annealing temperatures. |
| Starting Page | 1676 |
| Ending Page | 1679 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.4229/24thEUPVSEC2009-2CV.2.71 |
| Alternate Webpage(s) | http://cecs.anu.edu.au/files/posters09/44885380000000101.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
