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Apparatus and Method for Controlling Process Chamber Pressure Background of the Invention
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lez, L. R. Vega– Gonz Á. |
| Copyright Year | 2017 |
| Abstract | Primary Examiner Richard Bueker * Notice: This patent issued on a continued prosirin ecution application filed under 37 CFR Attorney, Agent, or Firm Townsend, Townsend & Crew 1.53(d), and is subject to the twenty year 57 ABSTRACT patent term provisions of 35 U.S.C. 154(a)(2). The present invention provides an apparatus and methods for controlling gas pressure within a Semiconductor process chamber. The apparatus comprises a fluid conduit, and a 21 Appl. No.: 812,006 throttle valve positioned downstream of the process chamber 22 Filed: Mar. 5, 1997 outlet for controlling gas flow therethrough. A filter is disposed between the inlet of the fluid conduit and the 6 51) Int. Cl. . C23C 16/00 throttle valve for collecting gas particles flowing through the 52) U.S. Cl. . 427/248.1; 118/715; 156/345 fluid conduit to inhibit gas deposition on the throttle valve. 58 Field of Search . 118/715; 427/248.1; In addition, the filter functions as a flow restrictor to reduce 156/345 the gas flow rate through the fluid conduit. This allows the throttle Valve to operate in a more open position for a 56) References Cited particular desired gas preSSure, which usually reduces the |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://patentimages.storage.googleapis.com/70/7a/a2/aa1b93691ca0f7/US5871813.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
