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The influence of In composition on InGaAs-capped InAs/GaAs quantum-dot infrared photodetectors
| Content Provider | Semantic Scholar |
|---|---|
| Author | Lin, Wei-Hsun Chao, Kuang-Ping Tseng, C. C. Lin, Shih-Yen Wu, Meng-Chyi |
| Copyright Year | 2009 |
| Abstract | The influence of an additional InGaAs-capped layer on the performance of InAs/GaAs quantum-dot infrared photodetectors (QDIPs) is investigated. For the device with a 15% InGaAs-capped layer, a significant response at 7.9 μm is observed for the QDIP device. The results suggest that with the additional InGaAs-capped layer, the detection wavelengths of the InAs/GaAs QDIPs could be shifted to a longer-wavelength infrared range. A further increase in the In composition will not help to obtain an even longer-wavelength detection, which is attributed to the cancellation of a lower InGaAs state, and InAs-QD bandgap shrinkage resulted from the relaxed compressive strains of the InGaAs layer with a higher In composition. |
| Starting Page | 054512 |
| Ending Page | 054512 |
| Page Count | 1 |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.3212983 |
| Volume Number | 106 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/6750/1/000269850300129.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.3212983 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |