Loading...
Please wait, while we are loading the content...
Similar Documents
InAs/GaAs quantum dot infrared photodetectors with different growth temperatures
| Content Provider | Semantic Scholar |
|---|---|
| Author | Wang, S. Chen, Sung-Hua Lin, Shih-Yen Lin, Chun-Fu Lee, Chin Shuang |
| Copyright Year | 2003 |
| Abstract | Abstract InAs/GaAs quantum dot infrared photodetectors were fabricated with quantum dots grown at three different temperatures. Large detection wavelength shift (5–14.5 μm) was demonstrated by changing 40 degrees of the epitaxy temperature. The smaller quantum dots grown at lower temperature generate 14.5 μm responses. The detectivity of the normal incident 15 μm QDIP at 77 K is 3 × 10 8 cm Hz 1/2 /W. A three-color detector was also demonstrated with quantum dots grown at medium temperature. The three-color detection comes from two groups of different sizes of dots within one QD layer. This new type of multicolor detector shows unique temperature tuning behavior that was never reported before. |
| Starting Page | 527 |
| Ending Page | 532 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/S1350-4495(03)00164-6 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/27480/1/000186163600027.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/S1350-4495%2803%2900164-6 |
| Volume Number | 44 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
