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Effect of Sputtering Current on the Structure of Vanadium Nitride Thin Films Deposited by Reactive DC Unbalanced Magnetron Sputtering
| Content Provider | Semantic Scholar |
|---|---|
| Author | Borsup, Jongrak Buranawong, Adisorn Chaikhun, Surasing Witit-Anun, Nirun |
| Copyright Year | 2017 |
| Abstract | Vanadium nitride thin films were deposited on Si by reactive DC unbalanced magnetron sputtering method. The effect of sputtering current, in the range of 300 – 700 mA, on the structure of the as-deposited films was investigated. The crystal structure, thickness, roughness, surface morphology and chemical composition were characterized by XRD, AFM, FE-SEM and EDS, respectively. The results showed that the as-deposited films had fcc structure with (111), (200), (220) and (311) planes. The thickness and crystal size increase with increasing of the sputtering current. The lattice constant was in the range of 4.120–4.123 A. The as-deposited films compose of vanadium and nitrogen in different ratios, depending on the sputtering current. Cross section analysis by FE-SEM technique showed a compact columnar structure of the as-deposited films. Keywords : thin film, vanadium nitride, sputtering current, reactive DC unbalanced magnetron sputtering |
| Starting Page | 476 |
| Ending Page | 484 |
| Page Count | 9 |
| File Format | PDF HTM / HTML |
| Volume Number | 22 |
| Alternate Webpage(s) | http://science.buu.ac.th/ojs246/index.php/sci/article/download/1653/1614 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
