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Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells
| Content Provider | Semantic Scholar |
|---|---|
| Author | Marquardt, Oliver Hickel, Tilmann Neugebauer, Jörg Walle, Chris G. Van De |
| Copyright Year | 2013 |
| Abstract | We have employed continuum elasticity theory and an eight band k·p model to study the influence of thickness fluctuations in In0.2Ga0.8N quantum wells grown along the [112¯0] direction in GaN. Such fluctuations are the origin of polarization potentials that may spatially separate electrons and holes in the vicinity of a thickness fluctuation and therefore reduce the efficiency of light emitters. Our calculations reveal that even shallow fluctuations of one or two monolayers can induce a significant spatial separation of electrons and holes, in particular, if the lateral extent of such a fluctuation is large. |
| File Format | PDF HTM / HTML |
| DOI | 10.1063/1.4818752 |
| Volume Number | 103 |
| Alternate Webpage(s) | http://www.mrl.ucsb.edu/~vandewalle/publications/APL103,073115(2013)-Marguardt-polarization.pdf |
| Alternate Webpage(s) | https://doi.org/10.1063/1.4818752 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
