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Reduction in the Photoluminescence Intensity Caused by Ultrathin GaN Quantum Barriers in InGaN/GaN Multiple Quantum Wells
| Content Provider | MDPI |
|---|---|
| Author | Liu, Wei Liang, Feng Zhao, Degang Yang, Jing Chen, Ping Liu, Zongshun |
| Copyright Year | 2022 |
| Description | The optical properties of InGaN/GaN violet light-emitting multiple quantum wells with different thicknesses of GaN quantum barriers are investigated experimentally. When the barrier thickness decreases from 20 to 10 nm, the photoluminescence intensity at room temperature increases, which can be attributed to the reduced polarization field in the thin-barrier sample. However, with a further reduction in the thickness to 5 nm, the sample’s luminescence intensity decreases significantly. It is found that the strong nonradiative loss process induced by the deteriorated crystal quality and the quantum-tunneling-assisted leakage of carriers may jointly contribute to the enhanced nonradiative loss of photogenerated electrons and holes, leading to a significant reduction in photoluminescence intensity of the sample with nanoscale ultrathin GaN quantum barriers. |
| Starting Page | 339 |
| e-ISSN | 20734352 |
| DOI | 10.3390/cryst12030339 |
| Journal | Crystals |
| Issue Number | 3 |
| Volume Number | 12 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2022-02-28 |
| Access Restriction | Open |
| Subject Keyword | Crystals Ingan/gan Multiple Quantum Wells Photoluminescence Barrier Thickness Carrier Recombination Semiconductor Crystal Quality |
| Content Type | Text |
| Resource Type | Article |
