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Growth of GaN Thin Film by Pulsed Laser Deposition and Its Application on Ultraviolet Detectors
| Content Provider | Semantic Scholar |
|---|---|
| Author | Dadi Rusdiana Maman Budiman Mochamad Barmawi |
| Copyright Year | 2011 |
| Abstract | Crystalline GaN films were grown on (0001) sapphire substrates in atmospheres of nitrogen by pulsed laser deposition. The properties of GaN thin films were improved by increasing the growth temperature to 680 o C and the nitrogen flow rate during growth to 150 sccm. The GaN film grown at 680 o C in 100 sccm of nitrogen had a wurtzite structure with (0002) and (0004) orientations. The GaN film had an n-type carrier concentration of 1.5 x 10 cm and the electron mobility of 19.05 cm/V.sec. The ultraviolet detector based on GaN grown on (0001) sapphire were fabricated and characterized. The current responsivity increase at λ >310 nm and remain reasonably flat for photons with wavelength from 347 nm to 366 nm. |
| Starting Page | 336 |
| Ending Page | 341 |
| Page Count | 6 |
| File Format | PDF HTM / HTML |
| Volume Number | 1 |
| Alternate Webpage(s) | http://file.upi.edu/Direktori/FPMIPA/JUR._PEND._FISIKA/196810151994031-DADI_RUSDIANA/artikel3.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
