Loading...
Please wait, while we are loading the content...
Similar Documents
Low refraction properties of F-doped SiOC:H thin films prepared by PECVD
| Content Provider | Semantic Scholar |
|---|---|
| Author | Yoon, Sungpil Kang, Seung Min Jung, Woo Sik Kim, Hyoungsub Kim, Sang-Woo Yoon, D. H. |
| Copyright Year | 2008 |
| Abstract | Abstract Low refractive index materials which F-doped SiOC:H films were deposited on Si wafer and glass substrate by low temperature plasma enhanced chemical vapor deposition (PECVD) method as a function of rf powers, substrate temperatures, gas flow ratios (SiH 4 , CF 4 and N 2 O). The refractive index of the F-doped SiOC:H film continuously decreased with increasing deposition temperature and rf power. As the N 2 O gas flow rate decreases, the refractive index of the deposited films decreased down to 1.378, reaching a minimum value at an rf power of 180 W and 100 °C without flowing N 2 O gas. The fluorine content of F-doped SiOC:H film increased from 1.9 at.% to 2.4 at.% as the rf power was increased from 60 W to 180 W, which is consistent with the decreasing trend of refractive index. The rms (root-mean-square) surface roughness significantly decreased to 0.6 nm with the optimized process condition without flowing N 2 O gas. |
| Starting Page | 1410 |
| Ending Page | 1413 |
| Page Count | 4 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/j.tsf.2007.03.093 |
| Volume Number | 516 |
| Alternate Webpage(s) | http://nesel.skku.edu/paper%20files/50.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/j.tsf.2007.03.093 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
