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Compositional, Structural, Morphological, and Optical Properties of ZnO Thin Films Prepared by PECVD Technique
| Content Provider | MDPI |
|---|---|
| Author | Hacini, Noureddine Ghamnia, Mostefa Dahamni, Mohamed Boukhachem, Abdelwaheb Pireaux, Jean-Jacques Houssiau, Laurent |
| Copyright Year | 2021 |
| Description | ZnO thin films were synthesized on silicon and glass substrates using the plasma-enhanced chemical vapor deposition (PECVD) technique. Three samples were prepared at substrates temperatures of 200, 300, and 400 °C. The surface chemical composition was analyzed by the use of X-Ray Photoelectron spectroscopy (XPS). Structural and morphological properties were studied by using X-ray diffraction (XRD) and scanning electron microscopy (SEM). Optical properties were carried out by UV-visible spectroscopy. XPS spectra showed typical peaks of Zn(2p3/2), Zn(2p1/2), and O(1s) of ZnO with a slight shift attributed to the substrate temperature. XRD analysis revealed hexagonal wurtzite phases with a preferred (002) growth orientation that improved with temperature. Calculation of grain size and dislocation density revealed the crystallization improvement of ZnO when the substrate temperature varied from 200 to 400 °C. SEM images of ZnO films showed textured surfaces composed of grains of spherical shape uniformly distributed. The transmittance yields are reaching 80%, and the values of the band-gap energy indicate that the ZnO films prepared by PECVD present transparent and semiconducting properties. |
| Starting Page | 202 |
| e-ISSN | 20796412 |
| DOI | 10.3390/coatings11020202 |
| Journal | Coatings |
| Issue Number | 2 |
| Volume Number | 11 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2021-02-10 |
| Access Restriction | Open |
| Subject Keyword | Coatings Ceramics Zno Pecvd Xps Grain Size Transmittance |
| Content Type | Text |
| Resource Type | Article |
