NDLI: Surface modification of indium tin oxide for organic light-emitting diodes

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Surface modification of indium tin oxide for organic light-emitting diodes

Content Provider	Semantic Scholar
Author	Yu, Hongyu
Copyright Year	2001
Abstract	Organic Light ernittin~ diodes (OLEDs) have attracted a \vide spread interesi due to their potential applications in multicolor flat panel displays. OLEDs are essentially one or several organic thin film semiconductors sandwiched ben-sen two electrodes. The charge carrier injection effrciency of OLEDs is affsctsd by the energy barrier height at the interfaces between thin layers in the device. Indium tin oxide (ITO) is used as the anode for injection of holes into highest occupied molecular orbitals (HOMO) of the organic serniconductors in OLEDs. This thesis deals mainly with surface modification of ITO. By surface modification, the work function of ITO could be increased, and hence the energy barrier bebveen Fermi lever of the anode and HOMO of the organic semiconductor is decreased. Accordingly, the drive voltage of OLEDs could be reducedITO surfaces were modified by osygen, ammonia, and argon plasma respectivelyX-ray p ho toelectron spec troscop y (-XP S) has been used to c haractenze these surfaces. A surface band-bending rnodel is proposed based on the ,LIS information. This band mode1 successtlrlly explains the change in work function of TT0 f i e r plasma treatrnent. Hydrogenated amorphous carbon (a-C:H) films deposited b y ethylene plasma under V ~ ~ O U S conditions were also studied in th is thesis. The distribution of sp3 and sp2 bonding in these films was investigated using XPS and s-ray absorption near-edse spectroscopy (XANES). The factors affecring the structure of the a-C:H films are discussed.
File Format	PDF HTM / HTML
Alternate Webpage(s)	https://tspace.library.utoronto.ca/bitstream/1807/15636/1/MQ58702.pdf
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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