NDLI: Efficient Phosphorescent Organic Light Emitting Diodes Using F 4 TCNQ as the Indium-Tin-Oxide Modification Layer

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Efficient Phosphorescent Organic Light Emitting Diodes Using F 4 TCNQ as the Indium-Tin-Oxide Modification Layer

Content Provider	Scilit
Author	Jiao, Bo Zhu, Xiao-Bo Wu, Zhao-Xin Yu, Yue Hou, Xun
Copyright Year	2014
Description	Journal: Chinese Physics Letters A phosphorescent organic light emitting diode by using tetrafluorotetracyanoquinodimethane $(F_{4}$TCNQ) as the indium-tin-oxide modification layer and 4,4'-bis(carbazol-9-yl)biphenyl (CBP) as the hole transporting layer is reported. CBP doped with a green phosphorescent dopant, tris(2-(p-tolyl)pyridine) iridium(III) $(Ir(mppy)_{3}$) is used as the emission layer in this device, and the maximum current efficiency of 31.3 cd/A is achieved. Furthermore, low efficiency roll-off of 10.4% is observed with device luminance increasing from 100 $cd/m^{2}$ (29.7 cd/A) to 10000 $cd/m^{2}$ (26.5 cd/A). It is demonstrated that a charge-generation area is formed at $F_{4}$TCNQ/CBP interface, which will benefit hole injection into the hole transporting layer. Moreover, use of the CBP hole transporting layer will benefit the low efficiency roll-off by broadening triplet exciton formation, as well as by avoiding accumulation of unbalanced carrier at the hole transporting layer/emission layer interface.
Related Links	http://iopscience.iop.org/article/10.1088/0256-307X/31/9/097801/pdf
ISSN	0256307X
e-ISSN	17413540
DOI	10.1088/0256-307x/31/9/097801
Journal	Chinese Physics Letters
Issue Number	9
Volume Number	31
Language	English
Publisher	IOP Publishing
Publisher Date	2014-09-01
Access Restriction	Open
Subject Keyword	Journal: Chinese Physics Letters Inorganic Chemistry Quantum Science and Technology Light Emitting Diodes Efficient Phosphorescent Phosphorescent Organic Modification Layer Diodes Using Oxide Modification
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy

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