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c-axis oriented epitaxial BaTiO 3 films on „ 001 ...
| Content Provider | Semantic Scholar |
|---|---|
| Author | Vaithyanathan, Venugopalan Lettieri, James Tian, Weifeng Sharan, Ahna Vasudevarao, A. Li-D, Yang Kochhar, Abhay S. Ma, Hyungjin Levya, J. Zschack, Paul Chen, Linfang Gopalan, Venkatraman Schloma, Denis |
| Copyright Year | 2006 |
| Abstract | c-axis oriented epitaxial films of the ferroelectric BaTiO3 have been grown on 001 Si by reactive molecular-beam epitaxy. The orientation relationship between the film and substrate is 001 BaTiO3 001 Si and 100 BaTiO3 110 Si. The uniqueness of this integration is that the entire epitaxial BaTiO3 film on 001 Si is c-axis oriented, unlike any reported so far in the literature. The thermal expansion incompatibility between BaTiO3 and silicon is overcome by introducing a relaxed buffer layer of BaxSr1−xTiO3 between the BaTiO3 film and silicon substrate. The rocking curve widths of the BaTiO3 films are as narrow as 0.4°. X-ray diffraction and second harmonic generation experiments reveal the out-of-plane c-axis orientation of the epitaxial BaTiO3 film. Piezoresponse atomic force microscopy is used to write ferroelectric domains with a spatial resolution of 100 nm, corroborating the orientation of the ferroelectric film. © 2006 American Institute of Physics. DOI: 10.1063/1.2203208 |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://ws680.nist.gov/publication/get_pdf.cfm?pub_id=854190 |
| Alternate Webpage(s) | https://www.mri.psu.edu/sites/default/files/gopalan/Vaithyanathan-06-EpitaxialBTO.pdf |
| Alternate Webpage(s) | https://www.ems.psu.edu/~chen/publications/Venu2006JAP.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
