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Heteroepitaxial Growth of Single 3C-SiC Thin Films on Si (100) Substrates Using a Single-Source Precursor of Hexamethyldisilane by APCVD
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chung, Gwiy-Sang Kim, Kang-San |
| Copyright Year | 2007 |
| Abstract | carrier gasflow rate was 2.5 slm. The HMDS flow rate was important in obtaing a mirror-like crystalline surface. Thegrowth rate of the 3C-SiC film in this work was 4.3 μm/h. A 3C-SiC epitaxial film grown on the Si (100)substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), reflectionhigh energy electron diffraction (RHEED), atomic forc e microscopy (AFM), X-ray photoelectron spectroscopy(XPS) and Raman scattering, respectively. These results sh ow that the main chemical components of the grownfilm were single-crystalline 3C-SiC layers. The 3C-SiC film had a very good crystal quality without twins,defects or dislocations, and a very low residual stress. |
| Starting Page | 533 |
| Ending Page | 537 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.5012/bkcs.2007.28.4.533 |
| Volume Number | 28 |
| Alternate Webpage(s) | http://ocean.kisti.re.kr/downfile/volume/chemical/JCGMCS/2007/v28n4/JCGMCS_2007_v28n4_533.pdf |
| Alternate Webpage(s) | https://doi.org/10.5012/bkcs.2007.28.4.533 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
