NDLI: Influence of Carbonization Conditions in Hydrogen Poor Ambient Conditions on the Growth of 3C-SiC Thin Films by Chemical Vapor Deposition with a Single-Source Precursor of Hexamethyldisilane

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Influence of Carbonization Conditions in Hydrogen Poor Ambient Conditions on the Growth of 3C-SiC Thin Films by Chemical Vapor Deposition with a Single-Source Precursor of Hexamethyldisilane

Content Provider	Semantic Scholar
Author	Kim, Kang-San Chung, Gwiy-Sang
Copyright Year	2013
Abstract	This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, Si2(CH3)6) as a safe organosilane single precursor in a nonflammable H2/Ar (H2 in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at 1280°C. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields. This paper describes the characteristics of cubic silicon carbide (3C-SiC) films grown on a carbonized Si(100) substrate, using hexamethyldisilane (HMDS, Si2(CH3)6) as a safe organosilane single precursor in a nonflammable H2/Ar (H2 in Ar) mixture carrier gas by atmospheric pressure chemical vapor deposition (APCVD) at 1280°C. The growth process was performed under various conditions to determine the optimized growth and carbonization condition. Under the optimized condition, grown film has a single crystalline 3C-SiC with well crystallinity, small voids, low residual stress, low carrier concentration, and low RMS. Therefore, the 3C-SiC film on the carbonized Si (100) substrate is suitable to power device and MEMS fields.
Starting Page	175
Ending Page	180
Page Count	6
File Format	PDF HTM / HTML
DOI	10.5369/JSST.2013.22.3.175
Volume Number	22
Alternate Webpage(s)	http://ocean.kisti.re.kr/downfile/volume/ksensors/HSSHBT/2013/v22n3/HSSHBT_2013_v22n3_175.pdf
Alternate Webpage(s)	https://doi.org/10.5369/JSST.2013.22.3.175
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

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