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t-induced nitrogen doping on the fi eld e ff ect transistor characteristics of graphene †
| Content Provider | Semantic Scholar |
|---|---|
| Author | Imamura, Gaku Saikib, Koichiro |
| Copyright Year | 2015 |
| Abstract | The effect of nitrogen doping on graphene was characterized without exposing the prepared specimen to the atmosphere. Nitrogen doping was done via a photochemical process at room temperature, in which graphene on SiO2/Si was irradiated by UV light in ammonia. Field effect transistor measurements revealed that the UV-irradiation of graphene in NH3 causes electron doping of 10 cm 2 ( 0.01%) as a result of N-doping, which can be controlled by changing the irradiation time. Comparing the transfer characteristics and the Raman spectra, we discuss the structure of the graphene functionalized via photochemical reactions, and the corresponding electronic structure. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | https://pubs.rsc.org/en/content/articlepdf/2015/ra/c5ra12002k |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
