Loading...
Please wait, while we are loading the content...
Similar Documents
Layer-by-layer thermal conductivities of the Group III nitride films in blue / green light emitting diodes
| Content Provider | Semantic Scholar |
|---|---|
| Author | Su, Zonghui Huang, Li Liu, Fang Malen, Jonathan A. |
| Copyright Year | 2015 |
| Abstract | Thermal conductivities (k) of the individual layers of a GaN-based light emitting diode (LED) were measured along [0001] using the 3-omega method from 100-400 K. Base layers of AlN, GaN, and InGaN, grown by organometallic vapor phase epitaxy on SiC, have effective k much lower than bulk values. The 100 nm thick AlN layer has k1⁄4 0.93 6 0.16 W/mK at 300 K, which is suppressed >100 times relative to bulk AlN. Transmission electron microscope images revealed high dislocation densities (4 10 cm ) within AlN and a severely defective AlN-SiC interface that cause additional phonon scattering. Resultant thermal resistances degrade LED performance and lifetime making layer-by-layer k, a critical design metric for LEDs. VC 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4718354] |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://repository.cmu.edu/cgi/viewcontent.cgi?article=1094&context=meche |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Axillary lymph node group Dislocations Electron Probe Microanalysis Light Emitting Diode Device Component Metalorganic vapour phase epitaxy Microscope Device Component OLED Phonon Resultant Standard Industrial Classification The 100 anatomical layer density electron microscope gallium nitrate vapor |
| Content Type | Text |
| Resource Type | Article |
