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Propiedades físicas de películas delgadas de CulnS2 obtenidas mediante la técnica de rocío químico
| Content Provider | Semantic Scholar |
|---|---|
| Author | Olvera, María De La Luz Maldonado, Amir Asomoza, René Asomoza, Maximiliano |
| Copyright Year | 1999 |
| Abstract | The electrical, optical and structural properties of thin films of copper indium sulfide (CuInS2) prepared by chemical spray technique on glass substrates are reported. The films were prepared using an aqueous solution of copper cloride, indium cloride and thiourea. The films were grown keeping a constant temperature in the range 350- 500°C. The films obtained are p-type conductivity and the electrical resistivity reachs minimun values of 0.15 Ω-cm. The bangap is 1.4 eV and the structure present a high degree of orientation along the (112) direction. |
| Starting Page | 109 |
| Ending Page | 113 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| Volume Number | 8 |
| Alternate Webpage(s) | https://www.fis.cinvestav.mx/~smcsyv/supyvac/8/sv810999.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
