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Robust Method of Fabricating Epitaxially Encapsulated MEMS Devices with Large Gaps
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chen, Yunhan Flader, Ian B. Shin, Dongsuk D. Ahn, Chae H. Rodriguez, Janna Kenny, Thomas W. |
| Copyright Year | 2017 |
| Abstract | This paper presents a novel wafer-level thin-film encapsulation process that allows both narrow and wide trenches, which are necessary for traditional structures such as comb-drives. Fully functional devices with trench widths up to 50 $\mu \text{m}$ are fabricated by employing a vapor phase XeF2 isotropic silicon etch to create large cavities and an epitaxial deposition seal to encapsulate the devices in an ultra-clean, high vacuum environment with no native oxide and humidity. In this paper, we demonstrate the robustness of the proposed fabrication process, as well as the inherent benefits of the high-temperature epitaxial encapsulation process: high quality factor, extreme stability, exceptional aging, and fatigue performance. [2017-0098] |
| Starting Page | 1235 |
| Ending Page | 1243 |
| Page Count | 9 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/JMEMS.2017.2758388 |
| Volume Number | 26 |
| Alternate Webpage(s) | https://ngi.stanford.edu/sites/g/files/sbiybj14406/f/08081772.pdf |
| Alternate Webpage(s) | https://doi.org/10.1109/JMEMS.2017.2758388 |
| Journal | Journal of Microelectromechanical Systems |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
