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Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces
| Content Provider | United States Department of Energy Office of Scientific and Technical Information (OSTI.GOV) |
|---|---|
| Organization | Sandia National Lab. (SNL-NM), Albuquerque, NM (United States) |
| Abstract | A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to release the surface-textured single-crystal film layer from the substrate. This method is applicable to a very wide variety of substrates and films. In some embodiments, the film is an epitaxial film that has been grown in crystallographic alignment with respect to a crystalline substrate. |
| Sponsorship | USDOE |
| Related Links | https://www.osti.gov/biblio/1167224 |
| File Format | |
| Patent Number | 8,932,403 |
| Language | English |
| Publisher Date | 2015-01-13 |
| Publisher Place | United States |
| Access Restriction | Open |
| Subject Keyword | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY |
| Content Type | Text |
| Resource Type | Patent |
