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Advanced Process Control in Dielectric Chemical Mechanical Polishing ( Cmp )
| Content Provider | Semantic Scholar |
|---|---|
| Author | Fang, Simon J. Smith, Taber H. Shinn, Greg B. Stefani, Jerry A. Boning, Duane S. |
| Copyright Year | 1999 |
| Abstract | The decrease in device dimensions is placing extremely tight cons raint on many aspects of the CMP process. We outline four key areas that will provide signif ica t steps toward attaining this level of control. In particular, we discuss the need for improved i n-line surface topography metrology, and show that that high resolution profilometry appears to me et this need. We demonstrate the need for new metrics to monitor and control CMP planar ity, and present evidence which suggests current methods of step height measurement a re i sufficient for this task. The use of in-situ sensors and on-line metrology is shown to provide significant improvement in our ability to monitor and control post-CMP film thickness . The use of in-situ sensors in compensating for incoming thickness variation is outlined. Fina lly, the use of on-line metrology for accurate monitoring and control of specific locations is shown. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www-mtl.mit.edu/Metrology/PAPERS/PAPERS/CMPMIC99_Control_final.ps |
| Alternate Webpage(s) | http://www-mtl.mit.edu/researchgroups/Metrology/PAPERS/CMPMIC99_Control_final.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
