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Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing
| Content Provider | Semantic Scholar |
|---|---|
| Author | Sun, Yu-Hsuan Cheng, Yun-Wei Wang, Szu-Chieh Huang, Ying-Yuan Chang, Chun-Hsiang Yang, Sheng-Chieh Chen, Liang-Yi Ke, Min-Yung Li, Chi-Kang Wu, Yuh-Renn Huang, Jian Jang |
| Copyright Year | 2011 |
| Abstract | Partial strain relaxation from the light-emitting diode (LED) with surface-textured p-GaN was observed. The textured device possesses less efficiency droop and a higher current level at the efficiency maximum, as compared with the planar one. The results suggest that surface roughening affects not only the external light extraction but also the internal quantum efficiency. Furthermore, the photoluminescent (PL) measurement at low temperature reveals that the percentage increment of the optical power of the textured LED over that of the planar LED becomes lower. In addition to the effect of frozen nonradiative defect states, the PL difference is related to the strain-correlated quantum-confined Stark effect. |
| Starting Page | 182 |
| Ending Page | 184 |
| Page Count | 3 |
| File Format | PDF HTM / HTML |
| DOI | 10.1109/LED.2010.2093503 |
| Volume Number | 32 |
| Alternate Webpage(s) | http://yrwu-wk.ee.ntu.edu.tw/yrwu2011a.pdf |
| Alternate Webpage(s) | https://doi.org/10.1109/LED.2010.2093503 |
| Journal | IEEE Electron Device Letters |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
