NDLI: Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing

Content Provider	IEEE Xplore Digital Library
Author	Yu-Hsuan Sun Yun-Wei Cheng Szu-Chieh Wang Ying-Yuan Huang Chun-Hsiang Chang Sheng-Chieh Yang Liang-Yi Chen Min-Yung Ke Chi-Kang Li Yuh-Renn Wu JianJang Huang
Copyright Year	1980
Abstract	Partial strain relaxation from the light-emitting diode (LED) with surface-textured p-GaN was observed. The textured device possesses less efficiency droop and a higher current level at the efficiency maximum, as compared with the planar one. The results suggest that surface roughening affects not only the external light extraction but also the internal quantum efficiency. Furthermore, the photoluminescent (PL) measurement at low temperature reveals that the percentage increment of the optical power of the textured LED over that of the planar LED becomes lower. In addition to the effect of frozen nonradiative defect states, the PL difference is related to the strain-correlated quantum-confined Stark effect.
Sponsorship	IEEE Electron Devices Society
Starting Page	182
Ending Page	184
Page Count	3
File Size	341358
File Format	PDF
ISSN	07413106
Volume Number	32
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Light emitting diodes Strain Gallium nitride Surface roughness Rough surfaces Temperature Surface texture surface texturing Light-emitting diode (LED) strain relaxation
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by p-Type GaN Surface Texturing

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