NDLI: Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

Please wait, while we are loading the content...

Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

Content Provider	Semantic Scholar
Author	Guo, Luke W. Lu, Wenjie Bennett, Brian R. Boos, John Brad Alamo, Jesús A. Del
Copyright Year	2015
Abstract	We demonstrate ultralow ohmic contact resistance to antimonide-based, p-channel quantum-well field-effect transistor (QW-FET) structures using a new p±-InAs/InAsSb cap structure. The incorporation of a p±-InAsSb layer enables the use of a thicker cap with lower sheet resistance, resulting in an improved contact resistivity. Using a Pd-based ohmic scheme, the composite cap structure resulted in a 4x reduction in contact resistance compared with a standard p±-InAs cap. This translates into nearly 3x improvement in the gm of fabricated InGaSb p-channel QW-FETs. Furthermore, Ni contacts on the composite cap were fabricated and a contact resistance of 45 Ω · μm was obtained. An accurate contact resistivity extraction in this very low range is possible through nanotransmission line models with sub-100 nm contacts. In devices of this kind with Ni-based contacts, we derive an ultralow contact resistivity of 5.2 · 10-8 Ω · cm2.
Starting Page	546
Ending Page	548
Page Count	3
File Format	PDF HTM / HTML
DOI	10.1109/LED.2015.2421337
Volume Number	36
Alternate Webpage(s)	http://www-mtl.mit.edu/~alamo/pdf/2015/RJ-158%20paper.pdf
Alternate Webpage(s)	http://dspace.mit.edu/bitstream/handle/1721.1/102323/Guo_Lu_EDL%202015.pdf;jsessionid=04B8D2333EF873A4EB4A08FE28405F15?sequence=1
Alternate Webpage(s)	https://dspace.mit.edu/openaccess-disseminate/1721.1/102323
Alternate Webpage(s)	https://dspace.mit.edu/bitstream/handle/1721.1/102323/Guo_Lu_EDL%202015.pdf;sequence=1
Alternate Webpage(s)	https://doi.org/10.1109/LED.2015.2421337
Journal	IEEE Electron Device Letters
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

An InGaSb p-channel FinFET

Ion-induced charge-collection transients in p-channel AlGaSb/InGaSb field-effect transistors

Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance

Field Mapping and Ohmic Contacts for AlGaN- or AlInN-Based Heterojunction Field Effect Transistors

High speed high power AlGaN/GaN heterostructure field effect transistors with improved ohmic contacts

Ultralow resistance in situ Ohmic contacts to InGaAs/InP

GaSb p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Ni/Pt/Au Source/Drain Ohmic Contacts

Development of CMOS Compatible P-Channel Junction-Field-Effect Transistors for Very Low Noise Applications

Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

Similar Documents

Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors

An InGaSb p-channel FinFET

Ion-induced charge-collection transients in p-channel AlGaSb/InGaSb field-effect transistors

Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance

Field Mapping and Ohmic Contacts for AlGaN- or AlInN-Based Heterojunction Field Effect Transistors

High speed high power AlGaN/GaN heterostructure field effect transistors with improved ohmic contacts

Ultralow resistance in situ Ohmic contacts to InGaAs/InP

GaSb p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Ni/Pt/Au Source/Drain Ohmic Contacts

Development of CMOS Compatible P-Channel Junction-Field-Effect Transistors for Very Low Noise Applications

Ultralow Resistance Ohmic Contacts for p-Channel InGaSb Field-Effect Transistors