Loading...
Please wait, while we are loading the content...
Similar Documents
Multi-level storage in phase-change memory : from multi-layer to single layer
| Content Provider | Semantic Scholar |
|---|---|
| Author | Hosaka, Sumio |
| Copyright Year | 2010 |
| Abstract | ABSTRACT In this paper, we report multi-level storage (MLS) in multi-layer (ML) and single-layer (SL) phase-change memories (PCM). For the former ML-PCM device, the active medium with two layers of chalcogenide consists of a top 30-nm TiN/180-nm SbTeN/20-nm TiN/bottom 120-nm SbTeN stacked multi-layer. Three stable and distinct resistance states are demonstrated in both static and dynamic switching characteristics of the multi-layer devices. For the latter SL-PCM device, the active medium with only one layer of chalcogenide consists of a top 50-nm TiN/150-nm SbTeN. We demonstrate that the number of distinguishable resistance levels can readily reach 16 and even higher. These levels in this study result from the initial threshold switching and the subsequent current-controlled crystallization induced by Joule heating. Therefore, the latter memory allows the creation of many distinct levels, thus enabling the low-cost ultra-high-density non-volatile memory. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.jpcos.jp/Paper&Academic_etc/pcos2010papers/4-20%20inyuPCOS2010.pdf |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
