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Dead-Space Theory Predictions of Excess-Noise Factor , Breakdown Voltage , and Frequency Response for Thin Avalanche Photodiodes
| Content Provider | Semantic Scholar |
|---|---|
| Author | Kwonc, Ohhyun |
| Copyright Year | 2003 |
| Abstract | The dead-space carrier multiplication theory properly predicts the reduction in the excess noise factor in a number of APDs. The theory is applied to measurements, obtained from J. C. Campbell and collaborators at the University of Texas, for InP, InAlAs, GaAs, and A1GaAs APDs with multiplicationregion widths ranging from 80 nm to 1600 nm. A refined model for the ionization coefficients is reported that is independent of the width of the device multiplication region of each device. In addition, in comparison to predictions from the conventional multiplication theory, the dead-space multiplication theory predicts a reduction in the mean bandwidth as well as a reduction in the power spectral density of the impulse response. In particular, it is shown that the avalanching noise at high-frequencies is reduced as a result of the reduction of the multiplication region width. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://people.bu.edu/teich/pdfs/SPIE-4283-519-2001.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Avalanches Coefficient Eighty Frequency response Multiplication Noise figure Offset binary Spectral density gallium arsenide width |
| Content Type | Text |
| Resource Type | Article |
