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Numerical Analysis of Homojunction Gallium Arsenide Avalanche Photodiodes ( Gaas-apds )
| Content Provider | Semantic Scholar |
|---|---|
| Copyright Year | 2008 |
| Abstract | In our earlier work we introduce a numerical analysis to investigate the excess noise and performance factor of double carrier multiplication homojunction avalanche photodiodes (APDs) considering the nonlocal nature of the ionization process. In this paper we investigate the gain, breakdown voltage and carrier injection breakdown probability of homojunction avalanche photodiode in the wide range of multiplication region width. Also in our calculations the effects of dead space has been considered. Our analyses based on the history dependent multiplication theory (HDMT) and width independent ionization coefficient. |
| File Format | PDF HTM / HTML |
| Alternate Webpage(s) | http://www.jpier.org/PIERB/pierb07/10.08032702.pdf |
| Language | English |
| Access Restriction | Open |
| Subject Keyword | Aharonov–Bohm effect Auditory processing disorder Avalanche effect Avalanches Coefficient Disintegration (morphologic abnormality) Erythronium grandiflorum Gallium 67 citrate Gallium:MCnc:Pt:Bld:Qn Homojunction Multiplication Numerical analysis Offset binary Thickness (graph theory) gallium arsenide pamidronate voltage width |
| Content Type | Text |
| Resource Type | Article |