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Distribution of dangling bond pairs on partially hydrogen-terminated Si(100) surface observed by scanning tunneling microscopy
| Content Provider | Semantic Scholar |
|---|---|
| Author | Chen, Ru-Ping Lin, Deng-Sung |
| Copyright Year | 2000 |
| Abstract | Hydrogen recombinative desorption from a Si 2 H 2 monohydride dimer on the Si(100) surface regenerates a dangling bond (DB) pair on the dimer. In this paper, we investigated the spatial distribution of the regenerated DB pairs on the Si(100)-2◊1:H and disilane-passivated Si(100) surface using elevated temperature scanning tunneling microscopy (HT-STM ) in the temperature range between 590 and 622 K. Experimental results indicate that the ends of onedimensional (1D) monohydride dimer islands are preferred sites for DB pairs and a repulsive interaction occurs between two neighboring DB pairs in the same dimer row. © 2000 Elsevier Science B.V. All rights reserved. |
| Starting Page | 196 |
| Ending Page | 200 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| DOI | 10.1016/S0039-6028(00)00199-0 |
| Volume Number | 454 |
| Alternate Webpage(s) | https://ir.nctu.edu.tw/bitstream/11536/30513/1/000087766200040.pdf |
| Alternate Webpage(s) | https://doi.org/10.1016/S0039-6028%2800%2900199-0 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
