Scanning tunneling spectroscopy and density functional calculation of silicon dangling bonds on the Si(100)-2 × 1:H surface

Content Provider	Semantic Scholar
Author	Min, Kyoungmin Martin, Pamela Peña Rockett, Angus Aluru, Narayana R. Lyding, Joseph W.
Copyright Year	2013
Abstract	Abstract We studied electronic properties of atomic-scale dangling bond (DB) and DB wires on Si(100)-2 × 1:H surfaces using a ultrahigh vacuum scanning tunneling microscope (UHV-STM). The decay of the near-midgap DB-states induced by an unpaired DB depends on the crystalline orientation of the Si(100) surface. The decay length of the DB-states of an unpaired DB wire can be ~ 2.5 nm along the dimer row direction. The perturbation from an unpaired DB to an adjacent paired DB is also demonstrated. The results are in good agreement with density functional calculations.
Starting Page	147
Ending Page	151
Page Count	5
File Format	PDF HTM / HTML
DOI	10.1016/j.susc.2012.11.015
Volume Number	609
Alternate Webpage(s)	http://aluru.web.engr.illinois.edu/Journals/SS13.pdf
Alternate Webpage(s)	https://doi.org/10.1016/j.susc.2012.11.015
Language	English
Access Restriction	Open
Content Type	Text
Resource Type	Article