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Thickness dependent morphology and resistivity of ultra-thin Al films grown on Si(111) by molecular beam epitaxy
| Content Provider | Semantic Scholar |
|---|---|
| Author | Aswal, Dinesh Kumar Joshi, Niraj Debnath, Anil K. Gupta, S. K. Vuillaume, Dominique Yakhmi, Jatinder V. |
| Copyright Year | 2006 |
| Abstract | The morphology and electrical resistivity of ultrathin Al metal films grown on (111) Si substrates using molecular-beam epitaxy have been investigated. For thickness <60 nm, the film morphology consists of a two-dimensional network of Al islands, which grows via Volmer-Weber mechanism. The coalescence of islands is found to begin at a thickness of 60 nm. The room-temperature value of resistivity, contrary to the theoretical predictions of existing models, is found to increase monotonically with thickness. Also the temperature dependence of these films exhibited a metal-to-insulator transition at 110 K. The anomalous temperature dependences of resistivity have been explained using a two-dimensional variable range hopping conduction (2d-VRH) mechanism. |
| Starting Page | 1254 |
| Ending Page | 1258 |
| Page Count | 5 |
| File Format | PDF HTM / HTML |
| Volume Number | 203 |
| Alternate Webpage(s) | http://www.phantomsnet.net/files/abstracts/TNT2005/TNT05_aswalDinesh.pdf |
| Alternate Webpage(s) | https://doi.org/10.1002/pssa.200566102 |
| Language | English |
| Access Restriction | Open |
| Content Type | Text |
| Resource Type | Article |
